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Characterization of Substrate Noise Impact on RF CMOS Integrated Circuits in Lightly Doped Substrates Host Publication: Finds and Results from the Swedish Cyprus Expedition: A Gender Perspective at the Medelhavsmuseet Authors: C. Soens, C. Crunelle, P. Wambacq, G. Vandersteen, S. Donnay, Y. Rolain, M. Kuijk and A. Barel Publisher: IEEE, 345 E 47TH ST, NEW YORK Publication Date: May. 2003 Number of Pages: 6 ISBN: 0-7803-7705-2
Abstract: Analog and RF circuit performance in single-chip transceivers can severely suffer from coupling of digital switching noise to the silicon substrate To predict this performance degradation, a deeper understanding of the impact of substrate noise is absolutely necessary. Using measurements, this impact is studied as the cascade of an attenuation through the substrate from the source of substrate noise to the RF circuit and the propagation through the RF circuit to its output This approach has been validated with measurements on a 0.25 mum and a 0.18 mum CMOS low-noise. amplifier (LNA) and reveals insight in the mechanisms of impact of substrate noise on RF circuits. In addition, impact of a real digital circuit is measured on a 0.18 mum differential CMOS LNA
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