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A Bondpad-Size Narrowband LNA for Digital CMOS Host Publication: Finds and Results from the Swedish Cyprus Expedition: A Gender Perspective at the Medelhavsmuseet Authors: J. Borremans, P. Wambacq, G. Van Der Plas, Y. Rolain and M. Kuijk Publisher: IEEE Publication Date: Jun. 2007 Number of Pages: 4 ISBN: 1-4244-0530-0
Abstract: Abstract - The need for a high level of integration in wireless and multi-standard radios, as well as the expensive area in downscaled CMOS pushes towards low-area circuit solutions. Feedback-type inductorless LNAs are such an example. This paper demonstrates a bondpad-size feedback type narrowband LNA using only one stacked inductor. The gain is 20.8 dB at 3.4 GHz with a noise figure of 2.2 dB. This solution is many times smaller than a classical LNA configuration with several inductors, while obtaining similar performance. It is thus an appealing solution for low-area radio integration in digital CMOS.
Index Terms - CMOS, low area, Low-noise amplifier (LNA), narrowband, shunt-shunt feedback, stacked inductor.
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