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Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures Host Publication: 2020 IEEE International Reliability Physics Symposium, IRPS 2020 Authors: A. Grill, E. Bury, J. Michl, S. Tyaginov, D. Linten, T. Grasser, B. Parvais, B. Kaczer, M. Waltl and I. Radu Publisher: Institute of Electrical and Electronics Engineers Inc Publication Date: Apr. 2020 Number of Pages: 6
Abstract: In this work, we present time-zero variability and degradation data obtained from a large set of on-chip devices in specifically designed arrays, from room temperature to 4K. We show that the investigated nMOS transistors still suffer from significant PBTI and HC degradation down to the lowest temperatures. We further investigate the contribution of multiple-carrier mechanism versus single-carrier mechanism of Si-H bond dissociation across different temperatures. Finally, we extrapolate the time-to-failure for a large gate and drain bias space and show that HCD after on-state stress and off-state stress show opposite temperature trends with the off-state stress being worse at cryogenic temperatures.
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