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Comparison of temperature dependent carrier transport in FinFET and gate-all-around nanowire FET This publication appears in: Applied Sciences (Switzerland) Authors: S. Kim, J. Kim, D. Jang, R. Ritzenthaler, B. Parvais, J. Mitard, H. Mertens, T. Chiarella, N. Horiguchi and J. Woo Lee Volume: 10 Issue: 8 Publication Date: Apr. 2020
Abstract: The temperature dependent carrier transport characteristics of n-type gate-all-around nanowire field effect transistors (GAA NW-FET) on bulk silicon are experimentally compared to bulk fin field effect transistors (FinFET) over a wide range of temperatures (25끅 °C). A similar temperature dependence of threshold voltage (VTH) and subthreshold swing (SS) is observed for both devices. However, effective mobility (�eff) shows significant differences of temperature dependence between GAA NW-FET and FinFET at a high gate effective field. At weak Ninv (= 5 x 1012 cm2/V. s), both GAA NW-FET and FinFET are mainly limited by phonon scattering in �eff. On the other hand, at strong Ninv (= 1.5 x 1013 cm2/V. s), GAA NW-FET shows 10 times higher d�eff/dT and 1.6 times smaller mobility degradation coefficient (ff) than FinFET. GAA NW-FET is less limited by surface roughness scattering, but FinFET is relatively more limited by surface roughness scattering in carrier transport.
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