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First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering Host Publication: 65th Annual IEEE International Electron Devices Meeting, IEDM 2019 Authors: A. Vais, R. Alcotte, M. Ingels, P. Wambacq, B. Parvais, R. Langer, B. Kunert, N. Waldron, N. Collaert, Y. Mols, A. S. Hernandez, A. Walke, M. Baryshnikova, G. Mannaert and V. Deshpande Publisher: Institute of Electrical and Electronics Engineers Inc Publication Date: Dec. 2019
Abstract: In this paper, we demonstrate GaAs/InGaP HBTs grown on a 300 mm Si substrate. A DC current gain of ~112 and breakdown voltage, BVCBO, of 10 V is achieved. The emitter-base and base-collector diodes show an ideality factor of ~1.2 and ~1.4, respectively. This demonstration shows the potential for enabling a hybrid III-V CMOS/ technology for 5G and mm-wave applications, not limited to GaAs but which can also be extended to InGaAs on a 300 mm Si substrate.
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