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CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance Host Publication: 65th Annual IEEE International Electron Devices Meeting, IEDM 2019 Authors: U. Peralagu, B. De Jaeger, D. M. Fleetwood, P. Wambacq, B. Parvais, N. Waldron, N. Collaert, A. Alian, V. Putcha, A. Khaled, R. Rodriguez, A. Sibaja-Hernandez, S. Chang and E. Simoen Publisher: Institute of Electrical and Electronics Engineers Inc Publication Date: Dec. 2019
Abstract: We report on Al(Ga,In)N HEMTs, MISHEMTs and MOSFETs integrated on 200 mm Si wafers using Au-free processing in standard Si CMOS tools, and discuss the performance tradeoffs, limitations and solutions. The main highlights of process optimization include low RF transmission loss (0.15 dB/mm at 20 GHz), state-of-the-art contact resistance (RC) of 0.14 O mm for a non-Au, low thermal budget (<600 °C) contact scheme and a high vertical breakdown voltage (VBD) of >300 V (pre and post device processing). We show that MISHEMTs, which feature the highest field effect mobility (�FE), >2000 cm2/V.s, and the best 1/f noise performance, have the potential to outperform the other device types in terms of device scalability for high frequency operation.
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