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A 112-142GHz Power Amplifier with Regenerative Reactive Feedback achieving 17dBm peak Psat at 13% PAE Host Publication: ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference Authors: A. Visweswaran, B. Vignon, X. Tang, S. Brebels, B. Debaillie and P. Wambacq Publisher: Institute of Electrical and Electronics Engineers Inc Publication Date: Sep. 2019 Number of Pages: 4 ISBN: 978-1-7281-1551-1
Abstract: A two-way power-combining amplifier operating from 112끖GHz is presented. Integrated in Infineon's 0.13�m SiGe-BiCMOS technology,it delivers 17dBm of peak saturated power to a 50O load at 13% PAE. Five fully-differential,transformer-coupled amplifier stages per path provide 34dB of forward transmission gain. Each 5-stage PA consists of capacitively gain-enhanced pre-drivers operated from 1.5V,followed by an inductively gain-enhanced cascoded driver powered by 3.3V. BJT models relevant at frequencies beyond 100GHz are evaluated to outline the trade-off between stability and gain exploited in this work. The design and layout of a folded,fully-differential,?/4 power combiner is also presented,along with a full two-port characterization of the power-amplifier prototype.
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