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@Article{Pub_10528, author = {S. Bonaldo, E. Xia Zhang, S. E. Zhao, V. Putcha, B. Parvais, D. Linten, S. Gerardin, A. Paccagnella, R. A. Reed, R. D. Schrimpf and D. M. Fleetwood}, title={Total-Ionizing-Dose Effects in InGaAs MOSFETs With High-k Gate Dielectrics and InP Substrates}, journal={IEEE Transactions on Nuclear Science}, volume={67}, issue={7}, pages={1312-1319}, month={Jul}, year={2020} }
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