|
|
D. Yakimets, M. Garcia Bardon, D. Jang, P. Schuddinck, Y. Sherazi, P. Weckx, K. Miyaguchi, B. Parvais, P. Raghavan, A. Spessot, D. Verkest and A. Mocuta, “Power aware FinFET and lateral nanosheet FET targeting for 3nm CMOS technology,” in 63rd IEEE International Electron Devices Meeting, IEDM 2017, Institute of Electrical and Electronics Engineers Inc, Jan. 2018.
|
|
