|
|
S. Bonaldo, E. Xia Zhang, S. E. Zhao, V. Putcha, B. Parvais, D. Linten, S. Gerardin, A. Paccagnella, R. A. Reed, R. D. Schrimpf and D. M. Fleetwood, “Total-Ionizing-Dose Effects in InGaAs MOSFETs With High-k Gate Dielectrics and InP Substrates,” IEEE Transactions on Nuclear Science, vol. 67, no. 7, pp. 1312-1319, Jul. 2020.
|
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