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Crystalline Ge3N4 on Ge(111) This publication appears in: Applied Physics Letters Authors: R. Lieten, S. Degroote, M. Kuijk and G. Borghs Volume: 91 Pages: 1-3 Publication Date: Nov. 2007
Abstract: The exposure of Ge(111) to a nitrogen plasma at temperatures above which Ge3N4 is thermally stable leads to the formation of a thin, mono crystalline Ge3N4 layer. At these temperatures equilibrium is established between the formation and dissociation of Ge3N4, limiting its thickness to 0.7 nm at ~800 °C. The thermal stability of a crystalline Ge3N4 layer is comparable to an amorphous one: it starts to evaporate at temperatures above 600 °C. Crystalline Ge3N4 allows the growth of III-nitrides on top of Ge(111) substrates and possibly the passivation of Ge-based field effect transistors. External Link.
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